1/2 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.06 - rev.c each lead has same dimensions abbreviated symbol : 0a abbreviated symbol : 0a each lead has same dimensions rohm : umt3 eiaj : sc-70 rohm : smt3 dtc125tka dtc125tua eiaj : sc-59 (3) collector (1) emitter (2) base (2) base (3) collector (1) emitter 0.2 0.15 0.1min. 0.9 0.7 1.25 2.1 0.3 ( 3 ) 0.65 ( 2 ) 2.0 1.3 ( 1 ) 0.65 ( 2 ) ( 1 ) 2.8 1.6 0.4 ( 3 ) 2.9 1.9 0.95 0.95 0.8 0.15 0.3min. 1.1 part no. dtc125tua umt3 taping t106 3000 dtc125tka smt3 taping t146 3000 ? ? package packaging type code basic ordering unit (pieces) c b r 1 =200k e r 1 e : emitter c : collector b : base 100ma / 50v digital transistor (with built-in resistor) dtc125tua / dtc125tka ? applications ? dimensions (unit : mm) inverter, interface, driver ? features 1) built-in bias resistors enable t he configuration of an inverter circuit without connecting external input resistors. 2) the bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, and parasitic effects are almost completely eliminated. 3) only the on / off conditions need to be set for operation, making the device design easy. 4) higher mounting densities can be achieved. ? structure npn epitaxial planar silicon transistor (resistor built-in type) ? packaging specifications ? inner circuit
2/2 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.06 - rev.c data sheet dtc125tua / dtc125tka ? absolute maximum ratings (ta=25 ? c) parameter symbol v cbo v ceo v ebo i c pc tj tstg limits 50 50 5 100 200 150 ? 55 to + 150 unit v v v ma mw c c collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature ? electrical characteristics (ta=25 ? c) parameter symbol min. typ. max. unit conditions bv cbo bv ceo bv ebo i cbo i ebo v ce(sat) h fe f t r 1 50 50 5 ? ? ? 100 ? 140 ? ? ? ? ? ? 250 250 200 ? ? ? 0.5 0.5 0.3 600 ? 260 v v v a a v ? mhz k i c = 50 a i c = 1ma i e = 50 a v cb = 50v v eb = 4v i c = 0.5ma , i b = 0.05ma i c = 1ma , v ce = 5v v ce = 10v , i e = ? 5ma , f = 100mhz ? collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency input resistance ? ? characteristics of built-in transistor ? electrical characteristic curves 1k 500 200 100 50 20 10 5 2 1 10 20 50 100 200 500 1m 2m 5m 10m v ce = 5v fig.1 dc current gain vs. collector current dc current gain : h fe collector current : i c (a) ta = 100 c ta = 25 c ta = ? 40 c 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 10 20 50 100 200 500 1m 2m 5m 10m i c /i b = 10/1 fig.2 collector-emitter saturation voltage vs. collector current collector saturation voltage : v ce(sat) (v) collector current : i c (a) ta = 100 c ta = 25 c ta = ? 40 c
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